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Abstract Antiferroelectrics are a promising class of materials for applications in capacitive energy storage and multi‐state memory, but comprehensive control of their functional properties requires further research. In thin films, epitaxial strain and size effects are important tuning knobs but difficult to probe simultaneously due to low critical thicknesses of common lead‐based antiferroelectrics. Antiferroelectric NaNbO₃enables opportunities for studying size effects under strain, but electrical properties of ultra‐thin films have not been thoroughly investigated due to materials challenges. Here, high‐quality, epitaxial, coherently‐strained NaNbO₃films are synthesized from 35‐ to 250‐ nm thickness, revealing a transition from a fully ferroelectric state to coexisting ferroelectric and antiferroelectric phases with increasing thickness. The electrical performance of this phase coexistence is analyzed through positive‐up negative‐down and first‐order reversal curve measurements. Further increasing thickness leads to a fully ferroelectric state due to a strain relief mechanism that suppresses the antiferroelectricity. The potential of engineering competing ferroic orders in NaNbO₃for multiple applications is evaluated, reporting significantly enhanced recoverable energy density (20.6 J cm⁻³at 35 nm) and energy efficiency (90% at 150 nm) relative to pure bulk NaNbO₃as well as strong retention and fatigue performance with multiple accessible polarization states in the intermediate thickness films. 

Abstract The occurrence of unconventional superconductivity in cuprates has long motivated the search for manifestations in other layered transition metal oxides. Recently, superconductivity is found in infinite‐layer nickelate (Nd,Sr)NiO₂and (Pr,Sr)NiO₂thin films, formed by topotactic reduction from the perovskite precursor phase. A topic of much current interest is whether rare‐earth moments are essential for superconductivity in this system. In this study, it is found that with significant materials optimization, substantial portions of the La_1−xSr_xNiO₂phase diagram can enter the regime of coherent low‐temperature transport (x = 0.14 ‐ 0.20), with subsequent superconducting transitions and a maximum onset of ≈9 K atx = 0.20. Additionally, the unexpected indication of a superconducting ground state in undoped LaNiO₂is observed, which likely reflects the self‐doped nature of the electronic structure. Combining the results of (La/Pr/Nd)_1−xSr_xNiO₂reveals a generalized superconducting dome, characterized by systematic shifts in the unit cell volume and in the relative electron‐hole populations across the lanthanides. 

Abstract Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high‐quality substrates. Here, using the ferroelectric BaTiO₃, production of precisely strain‐engineered, substrate‐released nanoscale membranes is demonstrated via an epitaxial lift‐off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide‐metal/ferroelectric/oxide‐metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm⁻¹and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100‐nm‐thick film). In devices integrated on flexible polymers, enhanced room‐temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS‐compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.